Tag "vacuum" archive

Metal–oxide–semiconductor field-effect transistor with a vacuum channel

Electrons emitted from the interface of oxide and silicon

With physical barriers limiting further increases in semiconductor electronic efficiency, scientists at the University of Pittsburgh redesigned the structure of the vacuum electronic device, allowing electrons to travel ballistically in a nanometer-scale channel without any collisions or scattering.
Continue reading “Metal–oxide–semiconductor field-effect transistor with a vacuum channel” »