Breakthrough development of flexible 1D-1R memory cell array

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With the introduction of curved smartphones, flexible electronic goods are gradually moving to the center stages of various markets. Flexible display technology is the culmination of the latest, cutting-edge electric cell device technology.  Scientists have now developed a bendable organic carbon nano compound-based 64bit memory. It shows improved data performance by limiting the direction of electric currents.

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(a) Illustration of as-fabricated 1D-1R organic carbon nano compound-based 64bit memory cell array on a flexible PEN substrate
(b) Optical image
(c) Schematic of unit cell: 1D-1R organic memory
(d) Chemical structure of diode layer used for cell
(e) Chemical structure of memory layer used for cell

Dr. Tae-Wook Kim at KIST announced their successful development of a 64-bit memory array using flexible and twistable carbon nano material and organo-polymer compound, which can accurately store and delete data.
The recently developed memory cell uses a technology, which arranges such organic material in a single configuration at room temperature and places the material on a desired spot on the substrate. This is the core technology in enlarging the storage capacity of memory, an unprecedented discovery until now. The research team developed a technology with the above characteristics to make the electric current flow in one direction so that the data could be rewritable even in a curved state.
In the past, each memory device was configurated with a grating structure, but there were complications in commercializing such device due to inaccuracy in storage and deleting data caused by a cross-talk between cells in the process of expanding its capacity.
In this research, organic memory cells (resistors) based on carbon nano compounds and organic diodes to control the direction of electric currents were stacked upon each other. Once the direction of the electric current is controlled and can be made to flow in one direction, data can be made rewritable, thereby limiting any interference from nearby cells. These cells are constructed in the form of 1D-1R (1 Diode + 1 Resistor)*, which gives them flexibility with accuracy in data processing.
Dr. Kim utilized the crosslinker** method, which can create patterns in a low temperature process. The crosslinker method enables the organic memory layer and organic diode layer to avoid damaging each other in the process of creating continuous layers. By using this method, his team managed to develop a non-volatile memory cell with an organic architecture, which was applicable on a twistable plastic substrate and with a 64-bit storage capacity.

* 1D-1R (1 Diode + 1 Resistor) array: An architecture where a resistor, which is a memory cell, is piled upon a diode, and controls the direction of electric currents.

** Crosslinker Method: A method of subjecting organic matter to ultraviolet rays to solidify the desired part with light. It can be demonstrated in a low temperature process, but it is also a way to chemically stabilize the organic matter whileenabling it to maintain its original characteristics after fabrication.

Read more : http://www.sciencedaily.com